Nexperia SiC MOSFET NSF030120D7A0
Raising the bar for safe, robust and reliable power switching
Nexperia today announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values. This announcement follows on from Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with RDSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options.
Key features
- Excellent RDSon temperature stability
- Very low switching losses
- Fast reverse recovery
- Fast switching speed
- Temperature independent turn-off switching losses
- Very fast and robust intrinsic body diode
- Faster commutation and improved switching due to the additional Kelvin source pin
Applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
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