Microchip's SiC MOSFETs feature unrivaled ruggedness and performance; offer the widest breadth of solutions in the market and provide the lowest system cost, fastest time to market and lowest risk. Our solutions come with an oxide lifetime of more than 100 years and a stable body diode, coupled with best-in-class avalanche ruggedness, short circuit capability and neutron susceptibility. Microchip’s 3.3 kV MOSFETs join the company’s comprehensive portfolio of SiC solutions that include 700V, 1200V and 1700V die, discretes, modules and digital gate drivers.
Microchip’s 3.3 kV SiC power devices include MOSFETs with the industry’s lowest RDS(on) of 25 mOhm and SBDs with the industry’s highest current rating of 90 amps. Both MOSFETs and SBDs are available in die or package form. These new levels of performance enable designers to simplify their design, create higher-power systems and use fewer paralleled components for smaller, lighter and more efficient power solutions.
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS Compliant
Target applications
- PV inverter, converter and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
Benefits
- High efficiency to enable lighter, more compact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership
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